vishay siliconix si4100dy new product document number: 69251 s-72062-rev. a, 08-oct-07 www.vishay.com 1 n-channel 100-v (d-s) mosfet features ? trenchfet ? power mosfet ? 100 % uis tested applications ? high frequency boost converter ? led backlight for lcd tv product summary v ds (v) r ds(on) ( ) i d (a) d q g (typ) 100 0.063 at v gs = 10 v 6.8 9 nc 0.084 at v gs = 6 v 5.8 n-channel mosfet g d s d s d d g d so -8 5 6 7 8 top v ie w 2 3 4 1 orderin g information: SI4100DY-T1-E3 (lead (p b )-free) s s notes: a. surface mounted on 1" x 1" fr4 board. b. t = 10 s. c. maximum under steady stat e conditions is 85 c/w. d. t c = 25 c. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds 100 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) t c = 25 c i d 6.8 a t c = 70 c 5.4 t a = 25 c 4.4 a, b t a = 70 c 3.5 a, b pulsed drain current i dm 20 continuous source-drain diode current t c = 25 c i s 5 t a = 25 c 2.1 a, b single avalanche current l = 0.1 mh i as 19 single avalanche energy e as 18 mj maximum power dissipation t c = 25 c p d 6 w t c = 70 c 3.8 t a = 25 c 2.5 a, b t a = 70 c 1.6 a, b operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b, c t 10 s r thja 37 50 c/w maximum junction-to-foot (drain) steady state r thjf 17 21 rohs compliant
www.vishay.com 2 document number: 69251 s-72062-rev. a, 08-oct-07 vishay siliconix si4100dy new product notes: a. pulse test; pulse width 300 s, duty cycle 2 % b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min typ max unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 100 v v ds temperature coefficient v ds /t j i d = 250 a 120 mv/c v gs(th) temperature coefficient v gs(th) /t j - 9 gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 24.5v gate-source leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 100 v, v gs = 0 v 1 a v ds = 100 v, v gs = 0 v, t j = 55 c 10 on-state drain current a i d(on) v ds 5 v, v gs = 10 v 20 a drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 4.4 a 0.051 0.063 v gs = 6 v, i d = 3.8 a 0.069 0.084 forward transconductance a g fs v ds = 15 v, i d = 4.4 a 10 s dynamic b input capacitance c iss v ds = 50 v, v gs = 0 v, f = 1 mhz 600 pf output capacitance c oss 90 reverse transfer capacitance c rss 50 total gate charge q g v ds = 50 v, v gs = 10 v, i d = 4.4 a 13.5 20 nc v ds = 50 v, v gs = 6 v, i d = 4.4 a 9 13.5 gate-source charge q gs 3 gate-drain charge q gd 4.6 gate resistance r g f = 1 mhz 1 tu r n - o n d e l ay t i m e t d(on) v dd = 50 v, r l = 14.3 i d ? 3.5 a, v gen = 6 v, r g = 1 15 25 ns rise time t r 12 20 turn-off delay time t d(off) 12 20 fall time t f 10 15 tu r n - o n d e l ay t i m e t d(on) v dd = 50 v, r l = 14.3 i d ? 3.5 a, v gen = 10 v, r g = 1 10 15 rise time t r 12 20 turn-off delay time t d(off) 15 25 fall time t f 10 15 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c 5 a pulse diode forward current i sm 20 body diode voltage v sd i s = 3.5 a, v gs = 0 v 0.8 1.2 v body diode reverse recovery time t rr i f = 3.5 a, di/dt = 100 a/s, t j = 25 c 45 70 ns body diode reverse recovery charge q rr 80 120 nc reverse recovery fall time t a 33 ns reverse recovery rise time t b 12
document number: 69251 s-72062-rev. a, 08-oct-07 www.vishay.com 3 vishay siliconix si4100dy new product typical characteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current gate charge 0 4 8 12 16 20 012345 v gs = 10 thru 7 v 4 v 5 v v ds - drain-to-source voltage (v) - drain current (a) i d 6 v 0.00 0.04 0.08 0.12 0.16 0.20 048121620 - on-resistance ( ) r ds(on) i d - drain current (a) v gs = 6 v v gs = 10 v 0 2 4 6 8 10 03691215 i d = 4.4 a - gate-to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs v ds = 50 v v ds = 8 0 v transfer characteristics capacitance on-resistance vs. junction temperature 0 4 8 12 16 20 012 34 567 25 c t c = 125 c - 55 c v gs - gate-to-source voltage (v) - drain current (a) i d 0 200 400 600 800 1000 0 2 04 06 080 c os s c is s v ds - drain-to-source voltage (v) c - capacitance (pf) c rss 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2 . 2 - 50 - 25 0 2 5 5 0 7 5 100 125 150 v gs = 6, 10 v i d = 4.4 a t j - junction temperature (c) r ds(on) - on-resistance (normalized)
www.vishay.com 4 document number: 69251 s-72062-rev. a, 08-oct-07 vishay siliconix si4100dy new product typical characteristics 25 c, unless otherwise noted source-drain diode forward voltage threshold voltage v sd - source-to-drain voltage (v) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 t j = 25 c 20 10 1 - source current (a) i s t j = 150 c 2.0 2.4 2. 8 3.2 3.6 4.0 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a ( v ) v gs(th) t j - temperat u re (c) on-resistance vs. gate-to-source voltage single pulse power 0.00 0.02 0.04 0.06 0.0 8 0.10 0.12 0.14 4567 8 910 - on-resistance ( ) r ds(on) v gs - gate-to-so u rce v oltage ( v ) t a = 25 c t a = 125 c i d = 4.4 a 0 30 50 10 20 power (w) time (s) 1 600 10 40 0.1 0.001 100 0.01 safe operating area, junction-to-ambient 100 1 100 0.01 - drain c u rrent (a) i d 0.1 v ds - drain-to-so u rce v oltage ( v ) * v gs minim u m v gs at w hich r ds(on) is specified 1 ms 10 ms 100 ms dc 10 s 0.1 1 10 10 t a = 25 c single p u lse 1 s limited b y r * ds(on) 1000 100 s b v dss limited
document number: 69251 s-72062-rev. a, 08-oct-07 www.vishay.com 5 vishay siliconix si4100dy new product typical characteristics 25 c, unless otherwise noted * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resi stance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determ ine the current rating, when this rating falls below the package limit. current derating* 0 2 4 6 8 0 25 50 75 100 125 150 t c - case temperat u re (c) i d - drain c u rrent (a) power derating 0 1 2 3 4 5 6 25 50 75 100 125 150 t c - case temperat u re (c) po w er dissipation ( w )
www.vishay.com 6 document number: 69251 s-72062-rev. a, 08-oct-07 vishay siliconix si4100dy new product typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon tech- nology and package reliability represent a com posite of all qualified locations. for related documents such as package/tape dra wings, part marking, and reliability data, see http://www.vishay.com/ppg?69251 . normalized thermal transient im pedance, junction-to-ambient 10 -3 10 -2 1 10 600 10 -1 10 -4 100 2 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (s) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 68 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 1 normalized thermal transient impedance, junction-to-foot 10 -3 10 -2 10 10 -1 10 -4 2 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (s) normalized effective transient thermal impedance 1 1
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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